发明名称 SEMICONDUCTOR DEVICE, AND ITS FABRICATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device arranged such that a conductive path is formed of fine particles and organic semiconductor molecules bonded to the fine particles and its conductivity is controlled by an electric field wherein the electrical conductivity does not fall even in long chain organic semiconductor molecules, and to provide its easy fabrication method. SOLUTION: Fine particles 6 of gold are formed under such a state as the surface is covered with protective particles for preventing aggregation. A first molecule having a functional group which can be bonded to the fine particle 6 is then made to act on the fine particle 6 to substitute for the protective particle. Subsequently, a second molecule is polymerized to the first molecule bonded to the fine particle 6, thus producing a long chain precursor molecule 11. After the fine particle 6 to which the precursor molecule 11 is bonded is arranged in the region for forming a channel layer 9, the precursor molecule 11 bonded to the fine particle 6 and other precursor molecule 11 bonded to an adjoining fine particle 6 are bonded and the adjoining fine particles 6 are coupled by organic semiconductor molecules 7 produced as a result. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008153257(A) 申请公布日期 2008.07.03
申请号 JP20060336737 申请日期 2006.12.14
申请人 SONY CORP 发明人 YASUHARA DAISUKE;MURATA MASAKI
分类号 H01L51/30;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
代理机构 代理人
主权项
地址