发明名称 |
Phase-change memory and fabrication method thereof |
摘要 |
A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly in contact with one electrical terminal of the transistor. Particularly, the transistor can be a field effect transistor or a bipolar junction transistor.
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申请公布号 |
US2008157050(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20060617977 |
申请日期 |
2006.12.29 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;PROMOS TECHNOLOGIES INC.;WINBOND ELECTRONICS CORP. |
发明人 |
CHEN FREDERICK T |
分类号 |
H01L29/04;G11C11/00;H01L21/306 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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