| 摘要 |
A method for manufacturing a semiconductor device having a bulb-type recessed channel including: forming a trench that defines an active region including a channel region having a sidewall and a junction region in a semiconductor substrate; forming a device isolation layer that buries the trench, and forming a sidewall pattern that covers the sidewall of the channel region; forming a bulb-type trench by overlapping with the channel region in the semiconductor substrate, and forming a bottom protrusion having a predetermined space parted from the device isolation layer by removing the sidewall pattern; and forming a gate stack that overlaps with the bulb-type trench and the bottom protrusion.
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