Semiconductor component, particularly gate structure, has gate isolation layer, electrode on gate isolation layer, intermediate structure on electrode and another electrode on intermediate structure

摘要

The semiconductor component has a substrate with an upper side and a lower side. A gate structure is close to the upper side of the substrate, where the gate structure has a gate isolation layer, an electrode on the gate isolation layer, an intermediate structure on the electrode and another electrode on the intermediate structure. The intermediate structure has a titanium layer is titanium silicide layer containing titanium, and on the titanium layer has another tungsten layer, which is tungsten silicide layer, containing tungsten and silicon. An independent claim is also included for a method for producing gate structure for a semiconductor component.