SINGLE-SOURCE PRECURSOR FOR SEMICONDUCTOR NANOCRYSTALS

摘要

A process for preparing a single source solid precursor matrix for semiconductor nanocrystals comprising the steps of: a) Mixing of 0.1-1 Molar of an aqueous or nonaqueous (organic) solution containing the first component of the host matrix (1 ) with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state (2), b) dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution (3), c) addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state (4), d) addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material (5), e) addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture (6), f) heating the mixture thus obtained in step (e) to obtain a solid layered micro-structural precursor compound (7,8).