| 摘要 |
A TFT(Thin Layer Transistor) of a flat panel display and a manufacturing method thereof are provided to enable a capping layer as a PSG(Phosphosilicate Glass) layer to prevent impurities of a substrate from being emitted, thereby preventing transformation of the glass substrate and improving color reproduction. A buffer layer(53) is formed on a glass substrate(51), and composed with a single layer. A capping layer(54) is formed on the buffer layer. An active pattern(55) is formed on the capping layer, and has a source area and a drain area(55S,55D). A gate electrode(57) is formed on the active pattern. A passivation layer(59) is formed on the substrate having the gate electrode, and has first and second contact holes(59H1,59H2) respectively exposing the source and drain areas. Source and drain electrodes(61S,61D) are connected with the source and drain areas through the first and second contact holes. |
