| 摘要 |
<p>A method for manufacturing a semiconductor device and a structure of the same semiconductor device are provided to improve EM(Electro-Migration) characteristics and EFR(Early Failure Rate) characteristics by preventing a short circuit between metal lines. A metal line(22) having a predetermined pattern is formed on a lower interlayer dielectric(21). An O3-TEOS insulating layer(26) is formed on a surface of a lower interlayer dielectric exposed between a surface of the metal line and the metal line. An upper interlayer dielectric(24) is deposited on the O3-TEOS insulating layer. The O3-TEOS insulating layer is formed by using an atomic layer deposition method. The process for forming the O3-TEOS insulating layer includes a process for receiving TEOS by using an inert gas as a carrier, a pumping process for forming reference pressure, and a process for receiving O3.</p> |
