SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to improve a short channel effect between a source region and a drain region by forming a drift region separated from a gate electrode. A well region is formed within a semiconductor substrate(102). A gate electrode(106) is formed on the well region. A first and second drift regions(108,110) are formed at both sides of the gate electrode within the well region. A source region(112) and a drain region(114) are formed within the first and second drift regions. A gap between the first and second drift regions and the gate electrode is 0.1-0.2 mum. A gate insulating layer(107) is formed at a lower part of the gate electrode. A gate spacer is formed at both sidewalls of the gate electrode. An isolation layer is formed to define an active region and a field region on the semiconductor substrate. An interlayer dielectric(116) is formed on the well region to cover the gate electrode. A first contact hole(122) is formed to expose the source region. A second contact hole(124) is formed to expose the drain region. A first and second contact plugs(118,120) are formed within the first and second contact holes.