| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to prevent the lowering effect of electrical characteristics due to a leakage current by preventing a void within an isolation layer. A trench is formed in a semiconductor substrate. An upper edge of the trench is rounded by performing an in-situ plasma method. An insulating layer is deposited on the semiconductor substrate to bury the trench. The insulating layer is planarized to expose the semiconductor substrate. A trench isolation layer(212) is formed by planarizing the insulating layer. In the process for forming the trench, a silicon oxide layer is formed on the semiconductor substrate. A photoresist pattern for forming the trench is formed on the semiconductor substrate. The trench is formed in the semiconductor substrate by etching selectively the silicon oxide layer and the semiconductor substrate.
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