METHOD FOR FORMING LANDING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

A method for forming a landing contact plug of a semiconductor device is provided to cure damaged surface of a silicon substrate completely by performing an annealing process added to a curing process for the damaged substrate. A gate with a spacer and a junction region(140) are formed on a silicon substrate(100). An interlayer dielectric(150) is formed on the entire surface of the substrate to shield the gate. A contact hole exposing the junction region is formed by etching the interlayer dielectric. A buffer oxide layer(170) and an insulating layer for spacer are deposited on the contact hole and the interlayer dielectric. A part of the buffer oxide layer and the insulating layer deposited on the junction region and the interlayer dielectric is removed by etching the buffer oxide layer. A fine etching process is performed to the resultant structure. A cleaning process is performed to the resultant structure by using RO. The damaged part of the silicon substrate is cured completely by annealing the cleaned resultant structure. A single crystalline silicon layer(180) is formed within the contact hole by performing the SEG.