| 摘要 |
An apparatus and method for processing a surface of a substrate is provided to improve the quality of a thin film by controlling plasma in combination of inductive coupled plasma and capacitor coupling plasma. A substrate is processed in a processing space(115), and a plasma generating space(150) is provided over the processing space to generate plasma using a reaction gas supplied from an exterior. A shower head(140) is provided under the plasma generating space to spray the reaction gas and the source gas supplied from the exterior through spray holes formed on a lower portion into the processing space. A first RF power source supply unit(160) generates a first plasma generating space in an inductive coupled plasma method. A second RF power source supply unit(260) applies an RF power source to the shower head to form the processing space as a second plasma generating space. An RF controller(270) controls the first and second RF power controller.
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