| 摘要 |
A semiconductor device and a fabricating method thereof are provided to effectively control a threshold voltage due to the use of a metal gate electrode layer by using HfZrO layer as a gate insulation layer. A semiconductor device comprises a HfZrO(Hafnium Zirconium Oxide) layer pattern(240), and a gate electrode layer pattern(260). The HfZrO layer pattern is placed on a semiconductor substrate(200) with a gate insulation layer. The gate electrode layer pattern is positioned on the HfZrO layer pattern. A silicon oxide layer or a silicon oxide nitride layer is placed between the semiconductor substrate and the HfZrO layer pattern with the thickness smaller than 15Å. The HfZrO layer pattern has the thickness of 20 to 500Å. A barrier metal layer pattern is installed between the HfZrO layer pattern and the gate electrode layer pattern.
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