SEMICONDUCTOR DEVICE WITH FERROELECTRIC FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a ferroelectric field-effect transistor, and can have a simplified circuit provided at its gate side. SOLUTION: The semiconductor device has: the ferroelectric field-effect transistor which comprises a ferroelectric capacitor CFand a paraelectric capacitor Cpwhere an equivalent circuit of a gate portion is connected in series and has a threshold voltage VTHcorresponding to the remanent polarization of the ferroelectric capacitor CF; and a control unit (not illustrated) which fixes the gate potential of the ferroelectric field-effect transistor (for example, at a ground potential) and varies the back gate potential of the ferroelectric field-effect transistor (for example, switching +10V/-10V) to write to the ferroelectric capacitor a remanent polarization state corresponding to the potential difference between the gate and back gate of the ferroelectric field-effect transistor. COPYRIGHT: (C)2008,JPO&INPIT