SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, ELECTOOPTICAL DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a transparent oxide layer in which a source portion, a drain portion and a channel portion are integrally formed of a transparent oxide-based material, to provide a manufacturing method thereof, and to provide an electrooptical device and an electronic apparatus equipped with the semiconductor device. SOLUTION: This semiconductor device 1 has a substrate 8; the transparent oxide layer 2 equipped with a source portion 3 and a drain portion 4 provided on at least one surface of the substrate 8 and a channel portion 5 formed integrally with the source and drain portions 3, 4 and having a thickness smaller than the thicknesses of the source and drain portions 3, 4; a gate portion 7; and a gate insulating layer 6. COPYRIGHT: (C)2008,JPO&INPIT