发明名称 METHOD FOR PREPARING ZnO NANOCRYSTALS DIRECTLY ON SILICON SUBSTRATE
摘要 A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S 1 ) forming a Zn-Si-O composite thin film on the silicon substrate; and (S 2 ) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn-Si-O composite thin film by controlling the composition of the Zn-Si-O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.
申请公布号 US2008160292(A1) 申请公布日期 2008.07.03
申请号 US20070966552 申请日期 2007.12.28
申请人 KOREA INSTITUTE OF SCIENCE & TECHNOLOGY 发明人 KIM YOUNG HWAN;CHO WOON JO;KIM SEONG IL;KIM CHUN KEUN;KIM YONG TAE
分类号 B32B5/16;B05D3/02;B05D3/04 主分类号 B32B5/16
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