发明名称 |
METHOD FOR PREPARING ZnO NANOCRYSTALS DIRECTLY ON SILICON SUBSTRATE |
摘要 |
A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S 1 ) forming a Zn-Si-O composite thin film on the silicon substrate; and (S 2 ) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn-Si-O composite thin film by controlling the composition of the Zn-Si-O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.
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申请公布号 |
US2008160292(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20070966552 |
申请日期 |
2007.12.28 |
申请人 |
KOREA INSTITUTE OF SCIENCE & TECHNOLOGY |
发明人 |
KIM YOUNG HWAN;CHO WOON JO;KIM SEONG IL;KIM CHUN KEUN;KIM YONG TAE |
分类号 |
B32B5/16;B05D3/02;B05D3/04 |
主分类号 |
B32B5/16 |
代理机构 |
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地址 |
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