发明名称 SEMICONDUCTOR DEVICE HAVING ANTIFUSE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device has a semiconductor substrate, an insulating layer formed on the semiconductor substrate, a wiring formed in the insulating layer and an antifuse including first and second connecting portions coupled to the wiring. The anti fuse has a space provided between the first connecting portion and the second connecting portion and insulating the first connecting portion from the second connecting portion. The first connecting portion and the second connecting portion may be coupled by a conductive material disposed in the space.
申请公布号 US2008157271(A1) 申请公布日期 2008.07.03
申请号 US20070962233 申请日期 2007.12.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI KAZUMASA
分类号 H01L23/525;H01L21/768 主分类号 H01L23/525
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