| 摘要 |
Disclosed is a method of forming an interconnection of a semiconductor device. The method includes forming a lower interlayer insulating layer including a lower metal interconnection on a semiconductor substrate, forming an insulating layer and an upper interlayer insulating layer on the lower interlayer insulating layer, forming a damascene pattern of a contact hole or of a trench and a contact hole in the upper interlayer insulating layer, removing the insulating layer on the lower metal interconnection and in the same chamber forming a barrier metal layer on the damascene pattern having no insulating layer, removing the barrier metal layer on the lower metal interconnection, filling the damascene pattern with metal, and forming a metal interconnection by polishing the damascene pattern.
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