| 摘要 |
Embodiments relate to forming a pre-metal dielectric (PMD) layer. According to embodiments, the method may include depositing material of which the pre-metal dielectric layer is made on a semiconductor substrate through a chemical vapor deposition (CVD) process employing a high frequency (HF) power in a range from about 2550 mW to about 2650 mW; and polishing the material to form the pre-metal dielectric layer.
|
