发明名称 ILLUMINATION SYSTEM, LITHOGRAPHIC APPARATUS, MIRROR, METHOD OF REMOVING CONTAMINATION FROM A MIRROR AND DEVICE MANUFACTURING METHOD
摘要 An EUV illumination system, for example, for use in a photolithographic apparatus is configured to condition a radiation beam. A hydrogen radical source configured to supply gas containing hydrogen or hydrogen radicals into the illumination system. The hydrogen gas is effective to remove carbonaceous contamination from the surface of a mirror in the illumination system or to form a buffer against unwanted gases. In order to prevent damage by hydrogen that penetrates the mirror, the mirror comprises a layer made of metal non-metal compound adjacent a reflection surface of the mirror. A transition metal carbide, nitride, boride or suicide compound or mixture thereof may be used for example.
申请公布号 WO2008079008(A2) 申请公布日期 2008.07.03
申请号 WO2007NL50693 申请日期 2007.12.21
申请人 ASML NETHERLANDS B.V.;VAN HERPEN, MAARTEN MARINUS JOHANNES WILHELMUS;BANINE, VADIM YEVGENYEVICH;SINGH, MANDEEP;VOORMA, HARM-JAN;KLUNDER, DERK JAN WILFRED 发明人 VAN HERPEN, MAARTEN MARINUS JOHANNES WILHELMUS;BANINE, VADIM YEVGENYEVICH;SINGH, MANDEEP;VOORMA, HARM-JAN;KLUNDER, DERK JAN WILFRED
分类号 G03F7/20;G21K1/06 主分类号 G03F7/20
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