摘要 |
An EUV illumination system, for example, for use in a photolithographic apparatus is configured to condition a radiation beam. A hydrogen radical source configured to supply gas containing hydrogen or hydrogen radicals into the illumination system. The hydrogen gas is effective to remove carbonaceous contamination from the surface of a mirror in the illumination system or to form a buffer against unwanted gases. In order to prevent damage by hydrogen that penetrates the mirror, the mirror comprises a layer made of metal non-metal compound adjacent a reflection surface of the mirror. A transition metal carbide, nitride, boride or suicide compound or mixture thereof may be used for example. |
申请人 |
ASML NETHERLANDS B.V.;VAN HERPEN, MAARTEN MARINUS JOHANNES WILHELMUS;BANINE, VADIM YEVGENYEVICH;SINGH, MANDEEP;VOORMA, HARM-JAN;KLUNDER, DERK JAN WILFRED |
发明人 |
VAN HERPEN, MAARTEN MARINUS JOHANNES WILHELMUS;BANINE, VADIM YEVGENYEVICH;SINGH, MANDEEP;VOORMA, HARM-JAN;KLUNDER, DERK JAN WILFRED |