SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A semiconductor device produced by fabricating a high-resistance resistor and a capacitive element of low parasitic resistance at a time at the same step and a semiconductor device manufacturing method for producing such semiconductor devices at a few steps at a time. A capacitive element (55) composed of a lower electrode (51), a capacitor insulating film (52), and an upper electrode (53) and a thin-film resistive electrode (56) are fabricated at the same step. The lower electrode (51) of the capacitive element is lined with a lower wiring layer (11) (Cu wiring), and therefore the capacitive element has substantially an extremely low resistance. As a result, even if the thickness of the lower electrode (51) is decreased, the parasitic resistance does not increase. The resistive element (56) has the same thickness as that of the lower electrode (51) of the capacitive element. Since the thickness of the lower electrode (51) is small, the resistive element (56) is a high-resistance resistor. In the uppermost layer of a passive element part, there is a passive element cap insulating film (44) functioning as an etching stop layer during the upper electrode contact etching of the capacitive element.