发明名称 METHOD OF MANUFACTURING NANOSTAMP
摘要 <p>A method for manufacturing a nano stamp is provided to produce the densely patterned nano stamp without using expensive complicated equipment by forming a width of a protrusion unit and a width of a depression unit into a nano size. A resist layer(410) is formed on a surface of a nano stamp base material(100). An imprint process is performed on the resist layer with a imprint stamp having an unevenness unit(427) to form a first resist layer pattern. The nano stamp base material is patterned by using the first resist layer pattern as a mask. The resist layer is removed to complete the nano stamp having plural first unevenness units(437). A resist layer is formed on a surface of the nano stamp having the plural first unevenness units. The imprint stamp having the plural first unevenness units moves toward the resist layer to make a depression unit(425) of the imprint stamp between first protrusion units(433) of the nano stamp having the plural first unevenness units. An imprint process is performed to form a second resist layer pattern. The nano stamp base material is patterned by using the second resist layer pattern as a mask. The resist layer is removed to complete the nano stamp having plural second unevenness units(447). The processes are performed repeatedly until an N+1-th unevenness unit is overlapped with the first unevenness unit.</p>
申请公布号 KR20080062972(A) 申请公布日期 2008.07.03
申请号 KR20060139195 申请日期 2006.12.30
申请人 KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION 发明人 LEE, HEON
分类号 H01L21/027 主分类号 H01L21/027
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