| 摘要 |
<p>An exposure apparatus for restraining the growth of foreign materials of a photo mask is provided to prevent pattern defects due to the growable foreign materials by irradiating an electron beam to the photo mask. A mask loading unit(410) loads a photo mask into an exposure apparatus(400). A mask moving unit(420) moves the photo mask in the exposure apparatus toward an electron beam irradiation unit(430) or an exposure unit(440). The electron beam irradiation unit irradiates an electron beam to the photo mask before an exposure process is performed in the exposure unit with the electron beam irradiation. A growth of a reactant that is smaller than a critical dimension is controlled so that it does not grow over the critical dimension. A reactant greater than the critical dimension is removed. The electron beam irradiation unit irradiates the electron beam after the exposure process is performed in the exposure unit. Through the electron beam irradiation, the growth of a reactant smaller than critical dimension is controlled so that it does not grow over the critical dimension. A reactant greater than the critical dimension is also removed.</p> |
