发明名称 OVERLAY VERNIER KEY AND THE METHOD FOR FABRICATING OVERLAY VERNIER
摘要 <p>An overlay vernier key and a method for manufacturing the same are provided to improve the overlay accuracy of a laminated structure including an opaque layer by forming an overlay vernier using a fluorescent material. A semiconductor substrate(200) has a cell region and a scribe lane region. An outer box(210) is formed on the scribe region of the semiconductor substrate. A fluorescent layer(220) is formed on the semiconductor substrate including the outer box. A laminated structure(280) includes an opaque layer formed on the fluorescent layer. An inner box(300) is formed on the structure. The fluorescent layer is made of one or more groups consisting of a radiation material including blende(ZnS), a mixture of blende(ZnS) and cadmium sulfide(CdS), a compound of silver(Ag), copper(Cu), or lead(Pb) added to the mixture of the blende and the cadmium sulfide, and radium(Ra). The opaque layer includes a carbon-based layer or a poly silicon layer.</p>
申请公布号 KR20080062732(A) 申请公布日期 2008.07.03
申请号 KR20060138816 申请日期 2006.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, BYEONG HO
分类号 H01L21/027 主分类号 H01L21/027
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