| 摘要 |
<p>A method for manufacturing a flash memory device is provided to reduce program disturbance and to improve coupling ratio of a cell by forming a low EFH(Effective Field oxide Height) between a cell and a peripheral regions. A tunnel insulating layer(42) and a first conductive layer(44) are sequentially formed on a substrate(40). A trench is formed in the substrate of an isolation region. An isolation layer(62) is formed in the trench. A deposition prevention layer is formed on the isolation layer. A second conductive layer(66) is formed on the first conductive layer. By removing the deposition prevention layer, a floating gate including the first and the second conductive layers is then formed.</p> |
