| 摘要 |
A method for fabricating an isolation layer of a semiconductor device is provided to improve a gap-fill margin by uniformly baking an SOD(Spin-On Dielectric) layer to reduce an aspect ratio of an HDP(High Density Plasma) layer. A trench(T) is formed in a semiconductor substrate(100). An SOD layer(108) is gap-filled in the trench. The formation of the SOD layer includes a process for coating an SOD material in the trench, a process for baking the coated SOD material in a furnace, and a process for curing the baked SOD material in the furnace. The baking process and the curing process are performed in the furnace in-situ. The baking process is performed by inserting a tube in the furnace. The baking process is performed by rotating the tube. Therefore, the baking of the SOD layer is uniformed performed, so that an etching process of the SOD layer for forming a subsequent recess gate is uniformly performed.
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