METHOD FOR FORMING ISOLATION TO SEMICONDUCTOR DEVICE

摘要

A method for forming an isolation layer of a semiconductor device is provided to prevent generation of a moat and the change of EFH(Effective For Height) by performing an etching process on an SOD(Spin-On Dielectric) layer after the SOD layer is deposited in a trench. A semiconductor substrate(100) has an isolation region. A hard mask layer(106) exposing the isolation region is formed on the semiconductor substrate. The exposed isolation region of the semiconductor substrate is etched by using the hard mask layer as an etching mask to form a trench(T). A first SOD layer(108) is formed so that the trench including the hard mask layer is gap-filled. An etching process is performed on the first SOD layer until the hard mask layer is exposed. A second SOD layer is formed on the recessed first SOD layer and the hard mask layer. CMP(Chemical Mechanical Polishing) is performed on the second SOD layer until the hard mask layer is exposed. The exposed hard mask layer is removed.