METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to enhance the yield and process margin and to reduce the manufacturing cost by removing a bit line tungsten hard mask layer without residues. An interlayer dielectric(12,16) including a bit line is formed on a semiconductor substrate(10) including a cell region(C) and a peripheral region(P). A storage electrode contact hole is formed by selectively etching the interlayer dielectric. A conductive layer(38) for storage electrode contact is formed on the upper surface of the semiconductor substrate. The bit line is exposed by performing a first planarization process on the conductive layer of the peripheral circuit region. A storage electrode contact plug is formed by performing a second planarization process on the conductive layer of the cell region.