| 摘要 |
A method for forming a trench isolation layer of a semiconductor device is provided to prevent an attack to a liner nitride layer by protecting the liner nitride layer from an etch source. A trench(120) is formed on a semiconductor substrate(100). A liner nitride layer(140) is formed on the semiconductor substrate including the trench. A first HDP(High Density Plasma) oxide layer(150) is deposited on the liner nitride layer. The first HDP oxide layer is plasma-etched by using a C4H8 gas as an etch source. A second HDP oxide layer is deposited on the first HDP oxide layer. The process for depositing the first HDP layer includes a process for loading the semiconductor substrate into a high density plasma chamber, a process for forming a first lower layer of the first HDP oxide layer by supplying a deposition source to the chamber, a process for removing an overhang by supplying an etch source to the chamber, and a process for forming a second lower layer of the first HDP oxide layer by supplying the deposition source to the chamber.
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