| 摘要 |
A gas supplying apparatus is provided to minimize the amount of contaminant in deposition equipment by removing the contaminant through a purge process. A gas supplying apparatus comprises a plurality of storage sections(110,120), first and second control valves(211,212,213,214), purge gas control values(311,312), and third control valves(221,222). Reactant used for the deposition process is stored in each storage section. The first and second control valves allow carrier gas or purge gas to be supplied to or discharged from the storage sections. The purge gas control valves control the purge gas supplied to the first control valves. The third control valves control the carrier gas or the purge gas introduced into the first control valve when the first and second control valves are closed.
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