| 摘要 |
A method for manufacturing a semiconductor device is provided to increase an SAC(Self Align Contact) margin by forming a landing plug contact using recess processing. A gate polysilicon layer, a gate metal film and a gate hard mask layer are sequentially stacked on a substrate(300). By patterning the stacked structure, a gate pattern(360) including a gate hard mask pattern(350a), a gate metal pattern(340a) and a gate polysilicon pattern(320a) is formed. Both sides of the gate metal pattern are partially recessed by performing a cleaning process. A gate electrode is then formed by forming a spacer at both sidewalls of the gate pattern. Then, a landing plug contact is formed between the gate electrodes.
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