APPARATUS FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a group III nitride compound semiconductor, having a simple structure and capable of easily controlling the density of a dopant element in crystals of a group III nitride compound semiconductor at an optimum value, and efficiently forming films by using a sputtering method.

SOLUTION: The apparatus 40 for manufacturing the group III nitride compound semiconductor is provided with a chamber 41; a Ga target 47a containing a Ga element and a dopant target 47b containing a dopant element which are placed within the chamber 41; and a power application means 45 for applying power to the Ga target 47a and the dopant target 47b simultaneously or alternately.

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