| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor, which is capable of growing a GaN layer of film whose quality is equivalent to or higher than 2-stage growing method on a sapphire substrate and capable of obtaining also a high productive efficiency as well as growth stability. SOLUTION: Nitriding through plasma is applied on the sapphire substrate 1 and a surface modified layer 2 is formed on the processed surface. Thereafter, the sapphire substrate 1 with the surface modified layer 2 formed thereon is carried into a gas phase growing device in an atmosphere containing ammonium of 20 slm, hydrogen of 30 slm and nitrogen of 50 slm, then, temperature is raised to the growing temperature (1100°C) of the GaN layer (nitride semiconductor layer) 3 to grow the GaN layer 3 on the surface of the surface modified layer 2. COPYRIGHT: (C)2008,JPO&INPIT
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