| 摘要 |
The present invention relates to a semiconductor memory device with a fixed burst length, including a column control circuit, the semiconductor memory device including: a command decoder decoding external commands to be output as an internal command with fixed burst length information; a column controlling unit giving a bank address to the internal command to be output as a column control signal; and a bank controlling a read and write operation corresponding to the fixed burst length in accordance with on the column control signal.
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