| 摘要 |
A P-channel non-volatile memory is described. The P-channel non-volatile memory includes a substrate, a first memory cell, and second memory cell. An N-well is disposed over the substrate, and the first cell and the second cell are disposed over the N-well. The first memory cell includes a first gate, a first charge storage structure, a first doped region and a second doped region. The first doped region and the second doped region are disposed in the substrate on the respective sides of the first gate. The second cell includes a second gate, a second charge storage structure, a third doped region, and the second doped region. The third doped region and the second doped region are disposed in the substrate on the respective sides of the second gate. The second cell and the first cell share the second doped region.
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