发明名称 METHOD FOR FABRICATING A MICROELECTRONIC CONDUCTOR STRUCTURE
摘要 A method for fabricating a microelectronic structure includes forming a via aperture through a dielectric layer located over a substrate having a conductor layer therein, to expose the conductor layer. The conductor layer typically comprises a copper containing material. The method also includes etching the conductor layer to form a recessed conductor layer prior to etching a trench aperture within the dielectric layer. The trench aperture is typically contiguous with the via aperture to form a dual damascene aperture. By etching the conductor layer after forming the via aperture and before forming the trench aperture, such a dual damascene aperture is formed with enhanced dimensional integrity.
申请公布号 US2008160754(A1) 申请公布日期 2008.07.03
申请号 US20060616532 申请日期 2006.12.27
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FITZSIMMONS JOHN A.;GRUNOW STEPHAN;MEHTA SANJAY C.;SIMON ANDREW H.;YANG CHIH-CHAO
分类号 H01L21/4763 主分类号 H01L21/4763
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