发明名称 |
METHOD FOR FABRICATING A MICROELECTRONIC CONDUCTOR STRUCTURE |
摘要 |
A method for fabricating a microelectronic structure includes forming a via aperture through a dielectric layer located over a substrate having a conductor layer therein, to expose the conductor layer. The conductor layer typically comprises a copper containing material. The method also includes etching the conductor layer to form a recessed conductor layer prior to etching a trench aperture within the dielectric layer. The trench aperture is typically contiguous with the via aperture to form a dual damascene aperture. By etching the conductor layer after forming the via aperture and before forming the trench aperture, such a dual damascene aperture is formed with enhanced dimensional integrity.
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申请公布号 |
US2008160754(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20060616532 |
申请日期 |
2006.12.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FITZSIMMONS JOHN A.;GRUNOW STEPHAN;MEHTA SANJAY C.;SIMON ANDREW H.;YANG CHIH-CHAO |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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