发明名称 |
Non-volatile memory device including metal-insulator transition material |
摘要 |
A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.
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申请公布号 |
US2008157186(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20070980352 |
申请日期 |
2007.10.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WAN-JUN;LEE JO-WON;JEON SANG-HUN;KIM CHUNG-WOO |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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