FLASH MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

A flash memory device and a forming method thereof are provided to protect sides of a floating gate from an over-etching process by covering all sides of the floating gate with a control gate electrode. An isolation layer is formed on a semiconductor substrate(50) in order to define an active region. A control gate electrode(62) is formed across the active region. A floating gate(58) is inserted between the control gate electrode and the active region. A tunnel insulating layer(56) is inserted between the floating gate and the active region. A blocking insulating pattern(60) is inserted between the floating gate and the control gate electrode. The control gate electrode is formed to cover all sides of the floating gate.