MRAM-PRAM COMPOSITE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An MRAM-PRAM composite memory device and a manufacturing method thereof are provided to remarkably increase the degree of integration by implementing a multi-bit memory in one memory device. A phase change layer(22) is formed on a bottom electrode(21), and a top electrode(23) is formed on the phase change layer. A magnetoresistance structure(M) is formed on a side of the phase change layer. The magnetoresistance has a pinned layer(202), a non-magnetic layer(203) and a free layer(204) with variable magnetization direction. A first capping layer(201) is formed between the bottom electrode and a pinned layer, and a second capping layer is formed between the free layer and the top electrode.