AN OXYGEN ENHANCED METASTABLE SILICON GERMANIUM FILM LAYER

摘要

A method for pseudomorphic growth and integration of a strain-compensated metastable and/or unstable compound base (107) having incorporated oxygen and an electronic device (100) incorporating the base is described. The strain-compensated base (107) is doped by substitutional and/or interstitial placement of a strain-compensating atomic species. The electronic device may be, for example, a SiGe NPN HBT.