| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an improved method of manufacturing an amorphous silicon device having improved characteristics. <P>SOLUTION: A manufacturing method of a semiconductor device includes performing Plasma-Enhanced Chemical Vapor Deposition (PECVD) of an amorphous silicon layer, under conditions of a board temperature of approximately 20°C to 250°C, silicon-containing supply gas diluted at a dilution ratio of approximately 5:1 to 1,000:1 (diluent gas:feeding gas), wherein the diluent gas is selected from the group consisting of hydrogen and deuterium and a pressure of approximately 0.2 Torr to 50 Torr. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2008153646(A) |
申请公布日期 |
2008.07.03 |
| 申请号 |
JP20070306162 |
申请日期 |
2007.11.27 |
| 申请人 |
BP CORP NORTH AMERICA INC |
发明人 |
LI YAUN-MIN;BENNETT MURRAY S;YANG LIYOU |
| 分类号 |
C23C16/42;H01L21/205;C23C16/24;C23C16/50;H01L31/0376;H01L31/04;H01L31/075;H01L31/076;H01L31/20 |
主分类号 |
C23C16/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
