| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a metal film, which can form a metal film on a part to be film-formed except a perimeter of a substrate, and to provide a method for producing the metal film. SOLUTION: The apparatus for producing the metal film in an inner part of a chamber 1 is directed at forming a predetermined metal film by forming a precursor 24 made of a metal and chlorine through etching a member 11 to be etched which is formed from a material containing a metal that can form a halide, by chlorine radicals of plasma converted from chlorine gas, also making the precursor 24 be absorbed onto a substrate 3 having a lower temperature than that of the member 11 to be etched, and then reducing the precursor 24 with the chlorine radicals to deposit a metal component on the substrate 3; and comprises a susceptor 2 which mounts the substrate 3 thereon and has a mounting face 2a with a shorter radius than that of the substrate 3, and a temperature control means 6 which keeps the temperature of a part 3a to be film-formed of the substrate 3 lower than that of the perimeter 3b through the mounting face 2a. COPYRIGHT: (C)2008,JPO&INPIT
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