发明名称 VACUUM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus with which a film having high uniformity can be deposited at high yield, and to provide a vacuum deposition method. SOLUTION: The vacuum deposition apparatus is equipped with: a crucible 2 for accommodating a vapor deposition substance; a first heating mechanism 4 for heating the vapor deposition substance in the crucible; a conduit 6 whose one end 6a is connected to an opening 2a of the crucible and through which a gas of the vapor deposition substance generated from the crucible is passed; and a cylindrical diffusion chamber 10 having a nozzle 8 for discharging the gas. One end 10a of the diffusion chamber 10 is rotatably supported by the other end 6b of the conduit so that the diffusion chamber 10 rotates around a center axis. The nozzle 8 is projected along the axis direction of the diffusion chamber 10 and the tip end of the nozzle is opened in the form of a long slit. Second heating mechanisms 14, 16, 18 are provided at the outsides of the conduit 6, the diffusion chamber 10 and the nozzle 8, respectively, for preventing sticking of the vapor deposition substance. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008150649(A) 申请公布日期 2008.07.03
申请号 JP20060337857 申请日期 2006.12.15
申请人 TOKKI CORP 发明人 MATSUMOTO EIICHI;NAGATA HIROAKI;HAMANO AKIHIRO;OSAWA SATORU;MAKI SHUJI;FUJITSUKA MASANAO
分类号 C23C14/24 主分类号 C23C14/24
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