| 摘要 |
<p>The invention relates to a process of treating a structure for electronics or optoelectronics, the structure comprising successively: - a substrate, - a first oxide layer, - an intermediate layer, - a second oxide layer made of an oxide of a semiconductor material, - a thin semiconductor layer made of said semiconductor material, characterized in that it comprises a heat treatment of the structure in an inert or reducing atmosphere with a temperature and a duration chosen for inciting an amount of oxygen of the second oxide layer to diffuse through the semiconductor layer so that the thickness of the second oxide layer decreases by a determined value. The invention also relates to a process of manufacturing a structure for electronics or optoelectronics comprising the said heat treatment.</p> |
