PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL
摘要
<p>A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.</p>
申请公布号
WO2008079742(A2)
申请公布日期
2008.07.03
申请号
WO2007US87597
申请日期
2007.12.14
申请人
APPLIED MATERIALS, INC.;WHITE, JOHN, M.;PARK, BEOM SOO;TINER, ROBIN, L.;CHOI, SOO YOUNG
发明人
WHITE, JOHN, M.;PARK, BEOM SOO;TINER, ROBIN, L.;CHOI, SOO YOUNG