METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device which can eliminate a fixed charge existing in an insulation film which has an impact on the voltage withstanding performance by a simple method. SOLUTION: The method of manufacturing a silicon carbide semiconductor device includes a process forming a p-type electric field relaxing region 4 by ion implantation in the surface of a silicon carbide wafer consisting of an n-type silicon carbide layer 2 formed on an n+type silicon carbide substrate 1 by an epitaxial crystal growth method; a process of forming an insulation film 7 on the electric field relaxing region 4 by a chemical vapor deposition method; and a process of removing a surface portion of the insulation film 7 by etching to form an insulation film 7'. COPYRIGHT: (C)2008,JPO&INPIT