| 摘要 |
PROBLEM TO BE SOLVED: To anneal selectively predetermined regions present in a semiconductor substrate, by using a laser anneal having a long wavelength. SOLUTION: The reflection coefficient of a reflection-coefficient adjusting film 17 is made small as its film thickness is made small for the irradiation of a laser beam 20 on it. After forming this reflection-coefficient adjusting film 17 on a substrate 1 having a region An and a region Ap, the reflection-coefficient adjusting film 17 present on the region An is etched. Then, the laser beam 20 so irradiates the semiconductor substrate 1 as to perform anneals to n<SP>-</SP>-type- and n<SP>+</SP>-type-semiconductor regions 11, 14 of the region An. Similarly, after forming the reflection-coefficient adjusting film 17 on the semiconductor substrate 1, the reflection-coefficient adjusting film 17 present on the region Ap is etched. Then, the laser beam 20 so irradiates the semiconductor substrate 1 as to perform anneals to p<SP>-</SP>-type- and p<SP>+</SP>-type-semiconductor regions 12, 15 of the region Ap. COPYRIGHT: (C)2008,JPO&INPIT
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