发明名称 |
Advanced activation approach for MOS devices |
摘要 |
A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode on the gate dielectric; forming a source/drain region adjacent the gate dielectric and the gate electrode; forming an absorption-capping layer over the source/drain region and the gate electrode; performing an activation by applying a high-energy light to the absorption-capping layer; and removing the absorption-capping layer.
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申请公布号 |
US2008160709(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20060648371 |
申请日期 |
2006.12.29 |
申请人 |
CHEN CHIEN-HAO;LEE TZE-LIANG;CHEN SHIH-CHANG;KU KEH-CHIANG;NIEH CHUN-FENG;WANG LI-TING;CHANG HSUN |
发明人 |
CHEN CHIEN-HAO;LEE TZE-LIANG;CHEN SHIH-CHANG;KU KEH-CHIANG;NIEH CHUN-FENG;WANG LI-TING;CHANG HSUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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