METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING A CYCLIC SELECTIVE EPITAXIAL GROWTH TECHNIQUE AND SEMICONDUCTOR DEVICES FORMED USING THE SAME

摘要

Devices and methods of fabricating a conductive pattern of such devices comprise a non-single crystalline semiconductor pattern formed on a single crystalline semiconductor substrate, an insulating spacer formed on a sidewall of the non-single crystalline semiconductor pattern, the non-single crystalline semiconductor pattern selectively recessed using a cyclic selective epitaxial growth (SEG) process, and a silicide layer formed on the recessed non-single crystalline semiconductor pattern.