| 摘要 |
Disclosed is a method of manufacturing an alignment key of a semiconductor device. According to an embodiment, the method includes forming an insulating layer on a semiconductor substrate on which a cell region and a scribe line are defined, forming a photoresist pattern on the insulating layer and etching the insulating layer using the photoresist pattern as an etch mask so as to form a contact hole on the cell region and a mark hole on the scribe line, depositing a metal layer in the contact hole and the mark hole, and planarizing the metal layer so as to form a contact and an alignment mark. The mark hole can be the same size as the contact hole. In addition, the mark hole can be formed in plurality on the scribe line.
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