发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.
申请公布号 US2008157278(A1) 申请公布日期 2008.07.03
申请号 US20070965016 申请日期 2007.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 DO KWAN-WOO;ROH JAE-SUNG;LEE KEE-JEUNG;KIL DEOK-SIN;KIM YOUNG-DAE;KIM JIN-HYOCK;PARK KYUNG-WOONG;SONG HAN-SANG
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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